t4 - lds - 0285 -1, rev . 1 (4 /22/13 ) ?201 3 microsemi corporation page 1 of 5 1n3016bur-1 C 1n3045bur-1 available on commercial versions 1 w att s urface m ount z ener d iodes qualified per mil - prf - 19500/ 115 qualified levels : jan, jantx, and jantxv description this surface mountable z ener diode series is similar to the 1n3016 b-1 through 1n3045 b-1 jedec registration in the do - 13 package except that it meets the surface mount do - 213ab outline. it is an ideal selection for applications of high density and low parasitic req uirements. d ue to its glass hermetic seal qualities and metallurgically enhanced internal constructi on, it is also well suited for high - reliability applications where it is available in jan, jantx, and jantxv military qualifications. lower voltages are also available in the 1n3821aur - 1 through 1n3828aur - 1 series (3.3 v to 7.5 v) in the same package (see separate data sheet). do -2 13 ab (melf, ll41) package also available in : do- 41 package ( glass axial - leaded ) 1n3016b - 1 C 1n3045b -1 important: for the latest information, visit our website http://www.microsemi.com . features ? leadless surface mount equivalents to the jedec registered 1n3016 thr ough 1n3045 number series. ? zener voltage range: 6.8 volts to 110 volts. ? hermetically sealed , double plug glass construction . ? metallurgically bonded. ? voltage tolerances of 5%, 2%, and 1% available . ? jan, jantx, and jantxv qualificat ion s also available per mil - prf - 19500/115 . (s ee part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only) . applications / benefits ? regulates voltage over a broad operating current and temperature range . ? wide selection from 6.8 to 110 v. ? low reverse (leakage) currents. ? leadless package for surface mounting. ? ideal for high - density situations. ? metallurgically enhanced internal contact design for greater reliability and lower thermal r esistance. ? non - sensitive to esd. ? inherently radiation hard as described in microsemi micronote 050 . maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +3 53 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com notes : 1. derate linearly starting at t ec 125 oc to zero at 175 oc (see figure1 ). parameters/test conditions symbol value unit junction and storage temperature t j and t stg -5 5 to +175 oc thermal resistance junction - to - end cap r ? j ec 50 oc /w dc power dissipation (1) p d 1.0 w forward voltage @ 200 ma v f 1. 2 v solder temperature @ 10 s t sp 260 o c downloaded from: http:///
t4 - lds - 0285 -1, rev . 1 (4 /22/13 ) ?201 3 microsemi corporation page 2 of 5 1n3016bur-1 C 1n3045bur-1 mechanical and packaging ? case: hermetically sealed glass melf package . ? terminals: tin/lead or rohs compliant matte - tin finished copper clad steel available (commercial grade only). solderable per mil - std - 750, method 2026. ? marking: cathode band. ? polarity: diode to be operated with the banded end positive with respect to the opposite end for zener regulation . ? mounting surface selection: the axial coefficient of expansion (coe) of t his device is approximately +6ppm/c. the coe of the mounting surface system should be selected to provide a suitable match with this device. ? tape & reel optional: standard per eia - 481 -1- a with 12 mm tape. consult factory for quantities. ? weight: approximately 0.05 grams. ? see p ackage d imensions on last page. part nomenclature jan 1n3016 b ur -1 e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number ( see electrical characteristic s t able ) zener voltage tolerance b = 5% c = 2% d = 1% rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant metallurgical ly bond ed surface mount melf package symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified vol tage and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). i zm maximum regulator (zener) current: the maximum rated dc current for the specified power rat ing. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified current. v r reverse voltage: the reverse voltage dc value, no alternating component. v z zener voltage: the z ener voltage the device will exhibit at a specified current (i z ) in its breakdown region. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its break down region at a spec ified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. downloaded from: http:///
t4 - lds - 0285 -1, rev . 1 (4 /22/13 ) ?201 3 microsemi corporation page 3 of 5 1n3016bur-1 C 1n3045bur-1 * electrical characteristics @ 25 c jedec type number nominal zener voltage v z @ i zt (note 1) zener test current i zt maximum zener impedance (no te 3) maximum zener current i zm (note 3) maximum reverse leakage current? i r @ v r maximum temp. coeff. of zener voltage vz z zt @ i zt z zk @ i zk volts ma o hms o hms ma ma a volts %/ o c 1n3016b ur -1 1n3017b ur -1 1n3018b ur -1 1n3019b ur -1 6.8 7.5 8. 2 9.1 37 34 31 28 3.5 4.0 4.5 6 700 700 700 700 1.0 .5 .5 .5 140 125 115 105 150 100 50 25 5.2 5.7 6.2 6.9 0.061 0.065 0.070 0.073 1n3020b ur -1 1n3021b ur -1 1n3022b ur -1 1n3023b ur -1 10 11 12 13 25 23 21 19 7 8 9 10 700 700 700 700 .25 .25 .25 .25 95 85 80 74 25 10 10 10 7.6 8.4 9.1 9.9 0.076 0.078 0.081 0.085 1n3024b ur -1 1n3025b ur -1 1n3026b ur -1 1n3027b ur -1 15 16 18 20 17 15.5 14 12.5 14 16 20 22 700 700 750 750 .25 .25 .25 .25 63 60 52 47 10 10 10 10 11.4 12.2 13.7 15.2 0.088 0.089 0.091 0.092 1n3028b ur -1 1 n3029b ur -1 1n3030b ur -1 1n3031b ur -1 22 24 27 30 11.5 10.5 9.5 8.5 23 25 35 40 750 750 750 1000 .25 .25 .25 .25 43 40 34 31 10 10 10 10 16.7 18.2 20.6 22.8 0.093 0.094 0.096 0.098 1n3032b ur -1 1n3033b ur -1 1n3034b ur -1 1n3035b ur -1 33 36 39 43 7.5 7.0 6.5 6.0 45 50 60 70 1000 1000 1000 1500 .25 .25 .25 .25 28 26 23 21 10 10 10 10 25.1 27.4 29.7 32.7 0.099 0.100 0.101 0.102 1n3036b ur -1 1n3037b ur -1 1n3038b ur -1 1n3039b ur -1 47 51 56 62 5.5 5.0 4.5 4.0 80 95 110 125 1500 1500 2000 2000 .25 .25 .25 .25 19 18 17 15 10 10 10 10 35.8 38.8 42.6 47.1 0.102 0.103 0.103 0.104 1n3040b ur -1 1n3041b ur -1 1n3042b ur -1 1n3043b ur -1 68 75 82 91 3.7 3.3 3.0 2.8 150 175 200 250 2000 2000 3000 3000 .25 .25 .25 .25 14 12 11 10 10 10 10 10 51.7 56.0 62.2 69.2 0.104 0.105 0.106 0.108 1n3044b ur -1 1n3045b ur -1 100 110 2.5 2.3 350 450 3000 4000 .25 .25 9.0 8.3 10 10 76.0 83.6 0.11 0.11 *jedec registered data. ?not jedec data. notes: 1. zener v oltage ( v z ) is measured with junction in thermal equilibrium with still air at a tem perature o f 25 o c . the test currents (i zt ) at nominal voltages provide a constant 0.25 watts. 2. the z ener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc z ener current (i zt or i zk ) is superimposed on i zt or i zk . zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminate unstable units. see micronote 202 for variation in dynamic impedance with differe nt z ener currents. 3. these values of i zm may often be exceeded in the case of individual diodes. the values shown are calculated for a unit at the high voltage end of its tolerance range. allowance has also been made for the rise in z ener voltage above v zt that results from z ener impedance and the increase in junction temperature as a unit approaches thermal equilibrium at a dissipat ion of 1 watt. the i zm values shown for +/ - 5% tolerance units may be used with little error for +/ - 10% tolerance units, but should be reduced by 7% to include a +/ - 20% tolerance unit near the high voltage end of its tolerance range. downloaded from: http:///
t4 - lds - 0285 -1, rev . 1 (4 /22/13 ) ?201 3 microsemi corporation page 4 of 5 1n3016bur-1 C 1n3045bur-1 graphs t ec (oc) (end cap) figure 1 temperature -po wer d erating c urve dc operation maximum rating (w) downloaded from: http:///
t4 - lds - 0285 -1, rev . 1 (4 /22/13 ) ?201 3 microsemi corporation page 5 of 5 1n3016bur-1 C 1n3045bur-1 package dimensions sy mbol d ime n si ons i nc h m illime ters min max min max bd 0 .0 94 0 .105 2.39 2.67 bl 0 .189 0 .205 4.80 5.21 ect 0 .01 4 0 .022 0.360 0.560 s 0 .001 min 0.03 min notes: 1 . dimen sio ns are in in ch es. m illim eters are gi ven for ge ne ral in for ma t io n onl y. 2. gap not controlled, shape of body and gap not controlled. 3. in ac co rd an ce wi th asme y 14 .5m, diame ters are eq uival en t to x s ym bo l og y. pad layout ltr i nch mm a 0.276 7.00 b 0.070 1.8 c 0.110 2 .8 downloaded from: http:///
|
